8-12 July 2013
Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
Presented by Mr. Alexander PARADZAH on 9 Jul 2013 from 17:40 to 18:40
Type: Poster Presentation
Track: Track A - Division for Condensed Matter Physics and Materials
Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent rectification with twelve orders of magnitude between -2V and +2V. The ideality factor was obtained as1.05 which signifies the dominance of the thermionic emission process in charge transport across the barrier. Deep Level Transient Spectroscopy (DLTS) revealed the presence of four deep level defects in the 30 – 350 K temperature range. The diodes were then irradiated with 5.4 MeV alpha particles up to a fluence of 2.6 × 1010 cm-2. Current Voltage (I-V) and Capacitance Voltage (C-V) measurements revealed degraded diode characteristics after irradiation. DLTS revealed the presence of two more energy levels with activation enthalpies of 0.42 eV and 0.76 eV below the conduction band. These levels were however only realized after annealing the irradiated sample at 200 ˚C and they annealed out at 400 ˚C.
F. D Auret, firstname.lastname@example.org, University of Pretoria