8-12 July 2013
AC/DC performance of a fully printed current switching silicon based transistor
Presented by Mr. Serges ZAMBOU on 10 Jul 2013 from 17:40 to 18:40
Type: Poster Presentation
Track: Track F - Applied Physics
We present a novel, large area, fully printed nanoparticulate silicon based transistor which is produced by a simple screen printing process under ambient conditions without the need for post processing steps. It functions as a high voltage unit gain two-way current switch for both direct and alternating current. The uniqueness of our device is its principle of operation, which is distinct from those of conventional transistors which rely on electric field modulation or charge injection. Its mode of operation is based on activated transport of charge through the active silicon layer. In the new transistor, switching is achieved by applying a signal to the base which results in change of the direction of the current from between the collector and base to between the base and emitter. We demonstrate the operation of the device printed on flexible substrates using silver as the conductive layer and highly doped P-type nano-silicon as the active layer. It is further demonstrated that the operation of the transistor is independent of the dominant carrier type in the semiconductor and the nature of the junction between the semiconductor and the three contacts.
Prof David Britton (email@example.com) and Prof. Margit Haring (Margit.Harting@uct.ac.za). University of Cape Town