8-12 July 2013
Ion Beam Modification of the Structure and Properties of Hexagonal Boron Nitride
Presented by Ms. Emily ARADI on 10 Jul 2013 from 16:00 to 16:20
Type: Oral Presentation
Track: Track F - Applied Physics
Cubic boron nitride (c-BN) nanocrystals have been produced by boron ion implantation of hexagonal boron nitride (h-BN) at various fluences and implantation energies. The optimum fluence was found to be 5x10<sup>14</sup>ions/cm<sup>2</sup> at 150 keV. The presence of these nanoparticles was investigated using glazing angle XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). Glazing angle XRD pattern after implantation exhibited c-BN diffraction peaks with high intensity at the glazing angle of 3<sup>o</sup> whose penetration depth corresponded to the implantation depth. After implantation, Fourier transfore Infrared spectroscopy indicated a peak at 1090 cm<sup>-1</sup> which corresponded to the vibrational mode for nc-BN.
Trevor E Derry Trevor.Derry@wits.ac.za University of the Witwatersrand