9-13 July 2012
Radiation damage of sapphire induced by ion implantation studied in nuclear and electronic energy loss regime.
Presented by Anna KOZAKIEWICZ on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
Single crystals of a-Al2O3 were irradiated with silver and gold ions at room temperature with the range of fluences from 6x1016 to 3x1017 ions/cm2. The samples were characterized by Rutherford Backscattering Spectrometry in Channelling geometry (RBS-C) and high resolution transmission electron microscopy (HRTEM). Electronic energy loss is responsible for creation of damage in high energy (15 -20 MeV) gold implanted crystals. In the 150 keV silver implanted specimens the disorder is produced by nuclear energy stopping of the ions. RBS-C analysis and HRTEM images provide surprising result of retained crystalline structure from the surface up to the buried silver layer. The entirely different picture is observed for energetic Au ions damaged sapphire. RBS-C analysis shows the presence of highly disordered structure of random level for both as implanted and annealed material.
Trevor Derry University of the Witwatersrand, School of Physics firstname.lastname@example.org