9-13 July 2012
Temperature dependence of the capture cross section for the E3 defect in Ir/ZnO Schottky contacts
Presented by Mr. Wilbert MTANGI on 12 Jul 2012 from 11:20 to 11:40
Type: Oral Presentation
Track: Track A - Division for Condensed Matter Physics and Materials
We report on the temperature dependence of the capture cross-section observed in the E3 defect in Ir/ZnO Schottky contacts. Conventional DLTS measurements reveal an estimated activation enthalpy of 0.30eV. The peak height of the DLTS peaks show a significant dependence on the rate window used. From the temperature dependence of the capture cross-section,a capture barrier energy of 38meV has been calculated. The apparent capture cross-section for the E3 peak has been obtained as 1.0 ×10<sup>-14</sup>cm<sup>2</sup> while the true capture cross-section has been calculated as 7.3×10<sup>-12</sup> cm<sup>2</sup>. Saturation of the E3 defect is observed with a filling pulse of width 200ms. The variation of the peak height with rate window for the E3 peak is due to the temperature dependence of the capture cross-section.
Prof F. D. Auret, email: email@example.com Institution: University of Pretoria