Speaker
Abstract content <br> (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>
The vacancy-dopant complex in Silicon, often referred to as the E-center, is a well-known defect. In this study, we investigated vacancy complexes with three common dopants namely the Sb, P and As by measuring isochronal annealing profiles of all three E centres in n-type silicon.
Si doped with P and combinations of P with Sb and As were exposed to alpha radiation from an Am-241 source. By making use of high-resolution Laplace deep-level transient spectroscopy, we were able to distinguish the different E-centers from each other, and measure their annealing rates individually. Since the Schottky contacts degraded with temperature, a novel approach was taken, where annealings were done with the Schottky contacts replaced after each annealing.
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?
No
Level for award<br> (Hons, MSc, <br> PhD, N/A)?
Msc
Main supervisor (name and email)<br>and his / her institution
Professor Walter Meuer
Wmeyer@up.ac.za
Apply to be<br> considered for a student <br> award (Yes / No)?
Yes
Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)
Yes
