4-8 July 2016
Kramer Law building
Africa/Johannesburg timezone
Paper Review: Initial screening in progress
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Investigation of the isochronal annealing profiles of the E centres in n-type silicon

Presented by Mr. Abraham BARNARD on 5 Jul 2016 from 11:30 to 11:50
Type: Oral Presentation
Track: Track A - Division for Physics of Condensed Matter and Materials

Abstract

The vacancy-dopant complex in Silicon, often referred to as the E-center, is a well-known defect. In this study, we investigated vacancy complexes with three common dopants namely the Sb, P and As by measuring isochronal annealing profiles of all three E centres in n-type silicon. Si doped with P and combinations of P with Sb and As were exposed to alpha radiation from an Am-241 source. By making use of high-resolution Laplace deep-level transient spectroscopy, we were able to distinguish the different E-centers from each other, and measure their annealing rates individually. Since the Schottky contacts degraded with temperature, a novel approach was taken, where annealings were done with the Schottky contacts replaced after each annealing.

Award

Yes

Level

Msc

Supervisor

Professor Walter Meuer Wmeyer@up.ac.za

Paper

No

Permission

Yes

Place

Location: Kramer Law building
Address: UCT Middle Campus Cape Town
Room: 4B


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