9-13 July 2012
Room Temperature (RT), 429 °C and 600 °C Ion implantation of Cadmium (Cd) in Glassy Carbon: Diffusion behavior and RAMAN Analysis
Presented by Mr. LESOLLE SEBITLA on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The combination of ion implantation with nuclear methods such as Rutherford backscattering spectroscopy, high vacuum turbo furnace and RAMAN spectroscopy has shown to be well adapted to the investigation of impurity migration in pure carbons materials induced by either thermal annealing or irradiation. This paper gives some typical examples studied in more details in our laboratory. Among them, the determination of thermodynamical data (diffusion study) from the analysis of the evolution of implanted species is rather classical. As an illustration, the diffusion study of Cadmium implanted at room temperature into glassy carbon is presented. Room temperature implantation of 360 keV, Cd ions to a fluence of 2 x 10<sup>16</sup> cm<sup>-2</sup> produced an amorphous surface layer approximately 280 nm thick. This amorphous state was also confirmed by the Raman spectroscopy which was also used and the results are presented in this paper. Isochronal vacuum annealing for 1 hour in the temperature range 350 °C to 700 °C was performed. Broadening of the cadmium profile was observed at temperatures beyond 500 C. Isothermal vacuum annealing was also performed for annealing cycles of up to 4 hours for temperatures between 350 °C and 700 °C. The diffusion coefficients were calculated from the broadening of cadmium profiles.
Prof. C.C. Theron (Chris.Theron@up.ac.za) Dept. of Physics University of Pretoria