9-13 July 2012
AFM and SEM studies on iodine implanted 6H-SiC
Presented by Mr. Remeredzai Joseph KUHUDZAI on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The study of ion beam modification of surfaces has increasingly become an integral part of characterising silicon carbide and related nuclear materials. The effect of a relatively high fluence (2 x 10<sup>17</sup> <sup>127</sup>I<sup>+</sup> ions) of iodine on the surface of 6H-SiC has been investigated. The contribution of vacuum annealing to the evolution of the surface morphology was also studied. Isochronal vacuum annealing was perfomed at temperetures ranging from 350 °C to 1200 °C. Atomic force microscopy (AFM) and high resolution scanning electron microscopy (FEG SEM) were employed to analyse the surface microstructure.
Prof JB Malherbe email@example.com University of Pretoria