9-13 July 2012
Diffusion studies of Xenon and Krypton implanted in CVD-SiC
Presented by Dr. Thulani HLATSHWAYO on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The diffusion behaviour of implanted xenon and Krypton in CVD-SiC has been investigated using Rutherford backscattering spectroscopy (RBS) and Scanning electron microscopy (SEM) techniques. Xenon (Xe+) and Krypton ions with an energy of 360 KeV were implanted in SiC to a fluence of 2 × 10<sup>16</sup> cm<sup>-2</sup> at room temperature (23°C), 350°C and 600°C. Sequential annealing was performed from 1000°C to 1500°C in 100°C. By comparing the widths of the as implanted profiles to the after annealing profiles the diffusion coefficients was determined while the changes in samples surfaces were monitored by SEM.