9-13 July 2012
Solid state reaction between zirconium and silicon carbide at elevated temperatures
Presented by Mr. eric NJOROGE on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The solid state reactions between a Zr thin film (150nm) and a single crystalline bulk 6H-SiC substrate induced by vacuum annealing at temperatures of 600 – 800 ⁰C for durations of 30, 45 and 60 minutes, were investigated by 1.6 MeV He⁺ backscattering spectrometry, X-ray diffraction and secondary electron microscopy. Zr was found not to react with SiC at a temperature of 600 ⁰C. The backscattered spectra were simulated using RUMP and the as-deposited spectra fit with the 600 ⁰C annealed spectra thus showing there were no reactions taking place. At higher temperatures, Zr reacts with the SiC substrate and forms a mixed layer of Zr carbide (ZrCx) and Zr silicide (Zr2Si) at annealing temperatures above 700⁰C. The formation of these phases was also confirmed by XRD.
Prof. Chris Theron