9-13 July 2012
Stability of high temperature operating Ru-SiC Schottky diodes using 6H-SiC as a substrate, and nickel as an ohmic contact
Presented by Mr. Kinnock Vundawaka MUNTHALI on 13 Jul 2012 from 08:40 to 09:00
Type: Oral Presentation
Session: Applied Physics Forum
Track: Track F - Applied Physics
High temperature operating Ru-SiC Schottky diodes were successfully fabricated for the first time by using electron beam deposition of ruthenium on the n-type bulk-grown 6H-SiC samples. The nickel back ohmic contact was deposited on the SiC samples by resistive evaporation technique. The Schottky diodes showed excellent rectifying behaviour up to an annealing temperature of 900 °C. The Ru-SiC Schottky diode samples were annealed isochronally in argon at temperatures ranging from 100 -1000 °C. After each annealing temperature, full IV and CV characterisation was done. The Schottky barrier height (SBH) obtained through IV characteristics, and CV characteristics increased from 0.58 eV, and 1.83 eV respectively for the as-deposited sample to 0.86 eV, and 4.12 eV for the sample annealed at 900 °C. The ideality factor and reverse saturation current ranged from 1.047, and 1.22x10<sup>-5</sup> A respectively for the as deposited to 3.05, and 3.85x10<sup>-11</sup> A for the sample annealed at 900 °C. The SBH obtained from IV characterisation showed some slight variation at various annealing temperatures. The Schottky diodes showed very good linear CV characteristics and excellent forward IV characteristics with a forward voltage drop of 1.5 V up to an annealing temperature of 900 °C, and then degraded after this temperature.
Prof Chris Theron, University of Pretoria email@example.com