9-13 July 2012
Heat treatment of 6H-Silicon Carbide implanted with palladium at room temperature
Presented by Ms. Jeaneth Thokozile KABINI on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The Rutherford Backscattering Spectrometry (RBS) and Scanning Electron Microscopy (SEM) were used to investigate the effects of heat treatment of 6H-Silicon Carbide (6H-SiC) implanted with palladium (Pd) ions at a fluency of 2 x 10<sup>16</sup> ions /cm<sup>2</sup> at room temperature. The implanted samples were then isochronally annealed for a period of 5 hour at a temperature range of 1000°C to 1400°C. The depth profile of the implanted samples before and after annealing was obtained using RBS. The microstructure and the topography of the samples were also investigated using the scanning electron microscopy (SEM) in order to investigate the effects of implanting the ions and annealing.
C.C Theron Chris.email@example.com University of Pretoria