9-13 July 2012
Africa/Johannesburg timezone
Home > Timetable > Session details > Contribution details
PDF | XML | iCal

Nitrogen-vacancy in diamond for Solid-state quantum computing

Presented by Mr. Bheki ZULU on 12 Jul 2012 from 09:00 to 09:20
Type: Oral Presentation
Session: DCMPM2
Track: Track A - Division for Condensed Matter Physics and Materials


Nitrogen-vacancy in diamond for Solid-state quantum computing B.P. Zulu1, Simon Connell3, Bonex Mwakikunga4, F. Petruccione1,2 1University of KwaZulu-Natal, School of Chemistry & Physics, Westville Campus, Durban 2National Institute of Theoretical Physics (NITheP), UKZN 3University Of Johannesburg, Department of Physics, Kingsway Campus, Johannesburg 4The Council for Scientific and Industrial Research, Nanotechnology, Pretoria Abstract Ever since the inception of the quantum computing idea, many technologies for its realization have been tried. The fundamental intention is to implement and manipulate a two-dimensional quantum mechanical unit of information that is termed a quantum bit (qubit). In this context during the past decade, solid-state fluorescing defects have drawn huge interest. Specifically, the nitrogen-vacancy centre in diamonds has been seen as a prominent candidate for the realization of single photon emission, quantum computing and magnetic field sensor, as it is being explored as a qubit. This is due to the individual addressability, capacity for optical spin polarization and the spin coherence time of milliseconds at room-temperature. Thus, the control of the NV centers in diamond is crucial for applications as defects with spin properties close to the surface of diamond are needed. Here, we report on an on-going study on the enhancement of NV centre creation in diamond using the method of ion implantation. The influence of the surface onto the created NV centers and their electronic spin is investigated. All the samples being used in this study are analyzed by optical techniques to identify the presence of NV centers in the samples and to identify dark spots suitable for ion implantation.






Francesco Petruccione, petruccione@ukzn.ac.za, University of KwaZulu-Natal



Primary authors