8-12 July 2013
Comparative analysis of fabricated Titanium Schottky doides on silicon and gold doped silicon
Presented by Mr. Fred Joe NAMBALA on 9 Jul 2013 from 17:40 to 18:40
Type: Poster Presentation
Track: Track A - Division for Condensed Matter Physics and Materials
Titanium (Ti) Schottky contacts were fabricated on (100) p-type silicon (p-Si). An Indium Garium (InGa) ohmic contact was deposited on the highly doped surface of the p-Si wafer. IV and CV measurements were conducted and results are presented. Also, detailed measurements of thin gold films fabricated by vacuum resistive deposition on the (111) n-type and (100) p-type silicon (Si) wafers are reported. The gold were diffused into Si at 1000 °C for times ranging from 15 minutes to 120 min. Diffusion profiles by Rutherford backscattering spectroscopy (RBS) are presented. Ti Schottky contacts were deposited on the gold doped (100) p-Si with an InGa ohmic contact for a diode sample. IV and CV were performed on this sample. A comparative analysis of above-mentioned samples is presented. Keywords: Schottky, resistive deposition, diffusion.
Dr MM Diale. email@example.com University of Pretoria