12-15 July 2011
Saint George Hotel
Africa/Johannesburg timezone

The Infrared Plasma Resonance of P in SiC

13 Jul 2011, 17:00
2h
Asteria

Asteria

Poster Presentation Track A - Condensed Matter Physics and Material Science Poster1

Speaker

Prof. JAPIE ENGELBRECHT (NMMU)

Description

The concentration of any dopant in a semiconductor can usually easily and readily be established using the plasma resonance minimum. Infrared reflectance spectroscopy was used to assess the doping of SiC wafers by phosphor implantation. However, results obtained did not match the theoretical predictions. The problem was investigated, including an assessment of the applicable theory. Results will be presented and discussed.

Level (Hons, MSc, <br> &nbsp; PhD, other)? other
Consider for a student <br> &nbsp; award (Yes / No)? No
Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)? No

Primary author

Prof. JAPIE ENGELBRECHT (NMMU)

Co-author

Presentation Materials

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