12-15 July 2011
Saint George Hotel
Africa/Johannesburg timezone
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The Infrared Plasma Resonance of P in SiC

Presented by Prof. JAPIE ENGELBRECHT on 13 Jul 2011 from 17:00 to 19:00
Type: Poster Presentation
Session: Poster1
Track: Track A - Condensed Matter Physics and Material Science

Content

<p>The concentration of any dopant in a semiconductor can usually easily and readily be established using the plasma resonance minimum. Infrared reflectance spectroscopy was used to assess the doping of SiC wafers by phosphor implantation. However, results obtained did not match the theoretical predictions. The problem was investigated, including an assessment of the applicable theory. Results will be presented and discussed.

Level (Hons, MSc, PhD, other)?

other

Consider for a student award (Yes / No)?

No

Short Paper

No

Place

Location:
Room: Asteria


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