9-13 July 2012
Comparison of the effects of annealing on Ni/Au and Ni/Ir/Au Schottky photodiodes
Presented by Mr. Phuti NGOEPE on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
In this study a comparison of the electrical and optical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al<sub>0.35</sub>Ga<sub>0.65</sub>N were investigated. The photodiodes were characterised as deposited and after annealing at 500 °C under an Ar ambient. The electrical and optical properties of these samples improved with annealing temperatures. The Schottky barrier heights for the Ni/Au Schottky diodes were measured as 0.913 and 1.264 eV for as deposited and 500 °C annealed diodes respectively. The barrier heights of the Ni/Ir/Au Schottky photodiodes were found to be 2.18 eV for as deposited and 1.90 eV after 500 °C annealing. The transmission of UV radiation through the Ni/Au layer was higher than through the Ni/Ir/Au which contributed to the responsivity of the Ni/Au photodiode being higher. In general the Ni/Au photodiode produced better electrical and optical characteristics in comparison to the Ni/Ir/Au photodiode when subjected to similar annealing conditions.
Dr. Walter Meyer; firstname.lastname@example.org University of Pretoria