7-11 July 2014
Africa/Johannesburg timezone
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A review on Effect of Ion Implantation on Hexagonal Boron Nitride

Presented by Prof. Trevor DERRY on 8 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Session: Poster1
Track: Track F - Applied Physics
Board #: F.409

Abstract

The extreme properties of cubic BN (c-BN), similar to or even superior to diamond, have led to a great deal of research on techniques for its synthesis. The study herein focuses on the synthesis of c-BN from the hexagonal phase (h-BN) by radiation effect using the ion implantation process. The effect of varying implantation parameters including the ion mass, the ion fluence (1×10<sup>14</sup> - 1×10<sup>15</sup> ions/cm<sup>2</sup>), the implantation energy (30 - 150 keV) and implantation temperature, with respect to the end-products are investigated. The presence of the c-BN phase is inferred using glancing incidence XRD (GIXRD) at glancing angles 0.01 ≤ ω ≤ 0.5<sup>o</sup> and Scanning Transmission Electron Microscopy (STEM). The GIXRD pattern after implantation exhibited c-BN and r-BN. These diffraction peaks were determined to be dependent on the incident glancing angle’s penetration depth for the X-rays, which corresponded to the penetration depth of the different ions in h-BN from simulations. Transmission Electron Microscopy showed high density regions in h-BN after implantation with HRTEM lattice fringes with lattice parameter of the c-BN in the implanted region.

Award

Yes

Level

PhD

Supervisor

Prof. Trevor E. Derry Trevor.Derry@wits.ac.za University of the Witwatersrand

Paper

Yes

Place

Room: D Ring ground level


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