7-11 July 2014
Africa/Johannesburg timezone
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Temperature-dependent barrier characteristics of Pd/ZnO Schottky barrier diodes

Presented by Mr. Meehleketo Advice MAYIMELE on 9 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Session: Poster2
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.406


The current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes were measured in the 30-370K temperature range and have been interpreted based on the assumption of a Gaussian distribution of the barrier heights due to the barrier inhomogeneities that prevail at the interface. It shows that the occurrence of a Gaussian distribution of the barrier height is responsible for the decrease of the apparent barrier height , increase of the ideality factor n and non-linearity in the activation energy plot at low temperature. The inhomogeneities are considered to have a Gaussian distribution mean barrier height of = 0.985 eV and a standard deviation of =0.022 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained as 0.883 and 0.541 A K-2cm-2 , respectively by means of the modified Richardson plot. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on Pd/ZnO can be successfully explained based on thermionic emission mechanism with a Gaussian distribution of the barrier heights.






M. Diale. mmantsae.diale@up.ac.za Department of Physics, University of Pretoria, Pretoria 0002, South Africa




Room: D Ring ground level

Primary authors