12-15 July 2011
Saint George Hotel
Africa/Johannesburg timezone
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Schottky contact on GaN

Presented by Dr. Mmantsae DIALE on 14 Jul 2011 from 17:00 to 19:00
Type: Poster Presentation
Session: Poster2
Track: Track F - Applied and Industrial Physics

Content

<p>Metal Au, Ni and Ni/Au contacts on n-GaN were studied for metal contacts for the fabrication of Shottky barrier ultraviolet photodetectors. AES, RBS and current-voltage measurements were used to study the samples. Figure 2 shows the current voltage mechanism of Au, Ni and Ni/Au transparent contacts onto GaN. The Schottky barrier heights of Au contacts were averaged at 0.84 ± 0.02 eV and the ideality factors of 1.7 ± 0.3. Series resistance for these contacts was about 481 ± 4 Ω. Ni contacts onto GaN are dominated by tunneling currents and the leakage current is higher than that of Au. The Schottky barrier heights of Ni contacts were averaged at 0.82 ± 0.04 eV and the ideality factors of 1.9 ± 0.2. Series resistance for these contacts was about 38 ± 1 Ω, far less than that of Au contacts. Ni/Au contacts are annealed at 500 °C for transparency. The leakage current of Ni/Au is two orders of magnitude lower than that of Ni and Au, and the Schottky barrier height was averaged at 2.04 ± 0.01 eV for ideality factors of about 1.6 ± 0.4.

Level (Hons, MSc, PhD, other)?

other

Consider for a student award (Yes / No)?

No0

Short Paper

Yes

Place

Location:
Room: Asteria


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