Electrical properties of Hg/n-Si (MS) and Hg/PO3/n-Si (MIS) Schottky Diodes
Presented by Mr. Fred Joe NAMBALA on 10 Jul 2014 from 10:20 to 10:40
Type: Oral Presentation
Track: Track A - Division for Physics of Condensed Matter and Materials
Metal-semiconductor (MS) and metal- insulator-semiconductor (MIS) Schottky barrier diodes were studies using 4-cyanobenzyl phosphonate (PO3) monolayer. The insulator was deposited on n-Si(111) through a chemical process. Electrical parameters of the Hg/n-Si(111), MS and Hg/PO3/n-Si, MIS contacts were obtained from the forward and the reverse bias current-voltage (I-V) and capacitance-voltage (C-V) measurements performed using a mercury (Hg) probe at room temperature. Experimental results show no rectification behavior for the MS and rectification for MIS diodes. The ideality factor (n) and the zero-bias barrier height (ФBo) were determined as 5 and 0.44 eV for the MS. In addition, the values of n and ФBo for MIS were determined as 1.2 and 0.68 eV using I-V measurements and then the ФBo of 0.64 eV was measured with C-V. C-V measurements for the MS diodes did not yield results due to low barrier height.
Mmantsae Diale, firstname.lastname@example.org. University of Pretoria, South Africa.