SAIP2015

Cross-section Electron Microscopy studies of Boron Implanted Hexagonal Boron Nitride

1 Jul 2015, 16:10

1h 50m

Board: F.401

Poster Presentation Track F - Applied Physics Poster2

Speaker

Dr Emily Aradi (University of the Witwatersrand)

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

No

Main supervisor (name and email)<br>and his / her institution

Trevor Derry
University of the Witwatersrand

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

We have reported on the use of ion implantation as a technique to modify hexagonal boron nitride (h-BN) material to nanocrystalline cubic boron nitride (nc-BN). Single crystal h-BN was implanted with boron ion at 150 keV at fluence of 5×10² ions/cm². Transmission Electron Microscopy (TEM) measurements were carried out using the High Angle Annular Dark-Field Scanning Electron Microscopy (HAADF-STEM) mode, which showed a density contrast in the sample after implantation, with regions of low contrast representing the high density c-BN symmetry. Raman spectroscopy showed that there is a new vibrational mode observed in the spectrum after implantation which corresponded to nc-BN. Phonon confinement model was used to investigate the size of the c-BN nanoparticles created by ion implantation.

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

n/a

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

yes

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

Yes