from 28 June 2015 to 3 July 2015 (Africa/Johannesburg)
Africa/Johannesburg timezone
SAIP2015 Proceeding published on 17 July 2016
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Cross-section Electron Microscopy studies of Boron Implanted Hexagonal Boron Nitride

Presented by Dr. Emily ARADI on 1 Jul 2015 from 16:10 to 18:00
Type: Poster Presentation
Session: Poster2
Track: Track F - Applied Physics
Board #: F.401

Abstract

We have reported on the use of ion implantation as a technique to modify hexagonal boron nitride (h-BN) material to nanocrystalline cubic boron nitride (nc-BN). Single crystal h-BN was implanted with boron ion at 150 keV at fluence of 5×10<sup>2</sup> ions/cm<sup>2</sup>. Transmission Electron Microscopy (TEM) measurements were carried out using the High Angle Annular Dark-Field Scanning Electron Microscopy (HAADF-STEM) mode, which showed a density contrast in the sample after implantation, with regions of low contrast representing the high density c-BN symmetry. Raman spectroscopy showed that there is a new vibrational mode observed in the spectrum after implantation which corresponded to nc-BN. Phonon confinement model was used to investigate the size of the c-BN nanoparticles created by ion implantation.

Award

No

Level

n/a

Supervisor

Trevor Derry University of the Witwatersrand

Paper

yes

Permission

Yes

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