9-13 July 2012
Africa/Johannesburg timezone
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Quantification of printed silicon aggregates using Ultra-small angle X-ray scattering

Presented by Mr. Emmanuel Ohieku Jonah JONAH on 12 Jul 2012 from 08:20 to 08:40
Type: Oral Presentation
Session: DCMPM2
Track: Track A - Division for Condensed Matter Physics and Materials

Abstract

Nanomaterials are being investigated to drive the production of low cost electronic devices. An example is the use of silicon nanoparticles and other semi conducting nanopaticles in printed electronics. The electrical property of the printed layers depends on some of the physical properties of the nanoparticles such as, the aggregate and cluster size of the particles, the connection in these aggregates, etc. In this work, an attempt to quantify aggregates of printed silicon nanoparticles and the branch properties is presented. Using Ultra-small Angle X-ray Scattering (USAXS) and a scaling model originally proposed for polymer structures, results are obtained which shows the model’s applicability to nanoparticulate structures.

Award

Yes

Level

PhD

Supervisor

Prof. D.T. Britton, NanoSciences Innovation Centre, Department of Physics, University of Cape Town,

Paper

Yes

Primary authors

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Co-authors

  • Prof. David Thomas BRITTON NanoSciences Innovation Centre, Department of Physics, University of Cape Town, Rondebosch 7701, South Africa
  • Prof. Margit HARTING NanoSciences Innovation Centre, Department of Physics, University of Cape Town, Rondebosch 7701, South Africa
  • Prof. Girma GORO Department of Physics, Haramaya University, PO Box 138 Dire Dawa, Ethiopia
  • Mr. Durgesh RAI Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, OH45221, USA
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