SAIP 2011 Support
Behaviour of iodine implanted in HOPG after heat treatment
Presented by Mr. Mxolisi MUKHAWANA on 13 Jul 2011 from 17:00 to 19:00
Type: Poster Presentation
Track: Track A - Condensed Matter Physics and Material Science
<p>The behaviour of iodine implanted in highly oriented pyrolytic graphite (HOPG) has been investigated using Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Iodine ions were implanted into HOPG using an energy of 360 keV and a dose of 1×1015 atoms cm-2 at room temperature. The implanted samples were annealed in vacuum at 900 0C, 1000 0C, 1100 0C and 1200 0C, all for 9 hours. The results revealed that iodine was released from the HOPG at the above annealing temperatures. RBS evaluation of the full width at half maximum (FWHM) and the number of iodine atoms before and after annealing did not reveal Fickian diffusion as the mechanism by which the iodine atoms were released from the HOPG. Evaluation of (002) peak intensities using XRD revealed an increase in preferred orientation of the graphitic layers after heat treatment of 1200 0C. The high resolution SEM micrographs of the HOPG samples before and after heat treatment showed no evidence of alterations on the polished surface.
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