Silicide formation in Pd-Si and Pd-SiC diffusion couples
Presented by Mr. Eric NJOROGE on 9 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.382
The reactions between Pd thin films deposited by resistive evaporation on Si and 6H-SiC substrates have been investigated by Raman, Rutherford backscattering spectrometry (RBS) and glancing-incidence X-ray diffraction (GIXRD). The deposited films were subsequently annealed from 100 to 800°C. At room temperature, no silicides were detected to have formed in either couple. After annealing, a reaction zone was formed between Pd and the two substrates. Pd starts to react with Si at 200°C while at 400°C with SiC. The initial phase to form in Pd-Si couples was Pd2Si and in Pd-SiC samples were Pd4Si and Pd9Si2. These initial phases formed were theoretically predicted by the binary and ternary effective heat of formation (EHF) models and the experimental results corroborate this.