7-11 July 2014
Africa/Johannesburg timezone
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Silicide formation in Pd-Si and Pd-SiC diffusion couples

Presented by Mr. Eric NJOROGE on 9 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Session: Poster2
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.382

Abstract

The reactions between Pd thin films deposited by resistive evaporation on Si and 6H-SiC substrates have been investigated by Raman, Rutherford backscattering spectrometry (RBS) and glancing-incidence X-ray diffraction (GIXRD). The deposited films were subsequently annealed from 100 to 800°C. At room temperature, no silicides were detected to have formed in either couple. After annealing, a reaction zone was formed between Pd and the two substrates. Pd starts to react with Si at 200°C while at 400°C with SiC. The initial phase to form in Pd-Si couples was Pd2Si and in Pd-SiC samples were Pd4Si and Pd9Si2. These initial phases formed were theoretically predicted by the binary and ternary effective heat of formation (EHF) models and the experimental results corroborate this.

Award

no

Level

PhD

Supervisor

Chris Theron

Paper

Yes

Place

Room: D Ring ground level


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