9-13 July 2012
A new method for obtaining the mole fraction in AlxGa1-xN epilayers
Presented by Ms. Genevéve DEYZEL on 10 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track A - Division for Condensed Matter Physics and Materials
The properties of thin films of Al<sub>x</sub>Ga<sub>1-x</sub>N are determined by the mole fraction of aluminium. It is thus of importance to determine this mole fraction in grown films. Various techniques to determine the mole fraction have been employed in the past, and some of these will be presented. Infrared reflectance measurements at near-normal incidence were obtained of thin films of Al<sub>X</sub>Ga<sub>1-X</sub>N, grown on c-plane oriented sapphire substrates by Metal Organic Chemical Vapour Deposition. A shifting of a reflectance peak at ~ 800 cm<sup>-1</sup> was observed, apparently dependent upon the aluminium mole fraction. Results will be presented and discussed, indicating that the mole fraction of aluminium can also be established from the shift in this particular reflectance peak.
JAA Engelbrecht, Japie.Engelbrecht@nmmu.ac.za, NMMU