SAIP 2011 Support
The soilid-state interaction of palladium on 6H-SiC
Presented by Ms. Jeaneth Thokozile KABINI on 13 Jul 2011 from 17:00 to 19:00
Type: Poster Presentation
Track: Track A - Condensed Matter Physics and Material Science
<p>The interaction of Pd and SiC samples during thermal annealing were investigated using x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) as well as Scanning Electron Microscopy (SEM). Two sample configuration were used (1) the palladium (50nm) was deposited onto a degreased 6H-SiC substrate and (2) palladium ions were implanted into the 6H-SiC substrate at room temperature and at 200°C with a fluency of 1 x 10<sup>15</sup>cm<sup>-2</sup>. Both sets of the samples were annealed between temperatures of 200°C-800°C for a period of 60 min. The study showed that the thermally annealed Pd on SiC showed no detectable reaction after annealing at 200°C-400°C. At 500°C the RBS spectra shows that the Pd had reacted with SiC. Using XRD it was observed that metal rich silicides Pd3Si tend to form first after annealing at 500°C followed by the formation of Pd2Si after annealing at 600°C, 700°C and 800°C. No Carbon compounds were detected by XRD in these annealing temperature ranges. The implanted samples showed no detectable phase formation after annealing at temperature ranges of 200°C-800°C for a period of 60 min and at 1000°C for 10 hours. The RBS / Channeling results for the implanted samples are also shown.
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