4-8 July 2016
Kramer Law building
Africa/Johannesburg timezone
Paper Review: Initial screening in progress
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Thermal stability of titanium Schottky contacts and defects introduced in epitaxial p-Si

Presented by Ms. Helga Tariro DANGA on 5 Jul 2016 from 16:10 to 18:00
Type: Poster Presentation
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.322

Abstract

The electronic and thermal properties of defects introduced during electron beam deposition (EBD) and isochronal annealing of titanium (Ti) contacts on epitaxial p-Si were investigated. In this work, Ti Schottky contacts were annealed with in a temperature range of 50 °C-400 °C. Current-voltage (I-V) measurements were conducted to monitor the change in electrical characteristics with every annealing step. A barrier height of 0.57 eV was measured on the as-deposited sample. Deep level transient spectroscopy (DLTS) and Laplace-DLTS techniques were employed to identify the defects induced after electron beam deposition (EBD) and isochronal annealing of the Ti Schottky contacts. The defect level identified on the as-deposited sample was a hole trap at 0.35 eV, known as the K-centre.

Award

Yes

Level

PhD

Supervisor

Walter.E Meyer wmeyer@up.ac.zaYes

Paper

Yes

Permission

Yes

Place

Location: Kramer Law building
Address: UCT Middle Campus Cape Town
Room:


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