from 28 June 2015 to 3 July 2015 (Africa/Johannesburg)
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SAIP2015 Proceeding published on 17 July 2016
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Deep level defects in alpha-particle irradiated epitaxially grown silicon

Presented by Ms. Helga DANGA on 30 Jun 2015 from 16:10 to 18:00
Type: Poster Presentation
Session: Poster1
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.302

Abstract

In this work, we investigated the defects introduced when epitaxially grown silicon was irradiated by making use of a 5.4MeV americium 241 foil radioactive source with a fluence rate of 7×10<sup>6</sup> cm<sup>-2</sup> s<sup>-1</sup> at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the defects introduced. After exposure to alpha-particles with a fluence of 1.3×10<sup>10</sup> cm<sup>-2</sup> , the energy levels of the hole traps measured were: EV+0.16eV, EV +0.33eV and EV +0.52eV. EV +0.33eV was identified as the interstitial carbon (Ci) related defect. It was a result of induced damage and could only be explained by the presence of donor-like traps. EV +0.52eV was an electron beam deposition (EBD) process induced defect because of its presence in the as deposited sample. According to literature, this defect is boron impurity related. The identity of EV +0.16eV was not clear.

Award

Yes

Level

MSc

Supervisor

Dr Mmantsae Diale

Paper

Yes

Permission

Yes

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