from 28 June 2015 to 3 July 2015 (Africa/Johannesburg)
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SAIP2015 Proceeding published on 17 July 2016
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Electrical characterization of introduced in bulk grown ZnO during electron beam exposure

Presented by Mr. Meehleketo Advice MAYIMELE on 30 Jun 2015 from 16:10 to 18:00
Type: Poster Presentation
Session: Poster1
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.284

Abstract

We have investigated by deep level transient spectroscopy (DLTS) the defects introduced in ZnO during electron beam exposure (EBE). In EBE, the samples were exposed to e-beam conditions, without metal deposition prior to Pd Schottky barrier diodes deposited by resistive evaporation. Melt grown ZnO contains three prominent defects, E1 at EC-120 meV, E3 at EC-300 meV and E4 at EC-690 meV. After the EBE a number of new defects were introduced that were not previously observed after electron beam deposition (EBD). The EBE-induced defects were caused by particles that were implanted during the EBE process and diffused deeper into the ZnO. There was not enough energy available to generate Frenkel pairs, thus the discrete breathers mechanism is required to transfer energy deep into the material to generate E-centers.

Award

yes

Level

MSc

Supervisor

Dr Diale M. mmantsae.Diale@up.ac.za (University of Pretoria)

Paper

yes

Permission

yes

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