28 June 2015 to 3 July 2015
Africa/Johannesburg timezone
SAIP2015 Proceeding published on 17 July 2016

Electrical characterization of introduced in bulk grown ZnO during electron beam exposure

30 Jun 2015, 16:10
1h 50m
Board: A.284
Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster1

Speaker

Mr Meehleketo Advice Mayimele (university of Pretoria)

Main supervisor (name and email)<br>and his / her institution

Dr Diale M. mmantsae.Diale@up.ac.za (University of Pretoria)

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

We have investigated by deep level transient spectroscopy (DLTS) the defects introduced in ZnO during electron beam exposure (EBE). In EBE, the samples were exposed to e-beam conditions, without metal deposition prior to Pd Schottky barrier diodes deposited by resistive evaporation. Melt grown ZnO contains three prominent defects, E1 at EC-120 meV, E3 at EC-300 meV and E4 at EC-690 meV. After the EBE a number of new defects were introduced that were not previously observed after electron beam deposition (EBD). The EBE-induced defects were caused by particles that were implanted during the EBE process and diffused deeper into the ZnO. There was not enough energy available to generate Frenkel pairs, thus the discrete breathers mechanism is required to transfer energy deep into the material to generate E-centers.

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

yes

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

MSc

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

yes

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

yes

Primary author

Mr Meehleketo Advice Mayimele (university of Pretoria)

Co-authors

Prof. Danie Auret (University of Pretoria) Dr Mmantsae Diale (University of Pretoria)

Presentation Materials