12-15 July 2011
Saint George Hotel
Africa/Johannesburg timezone
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Transmission electron microscopy investigation of radiation damage caused by keV implantation in single-crystal diamond.

Presented by Mr. Emmanuel Korawinga NSHINGABIGWI on 15 Jul 2011 from 11:45 to 12:00
Type: Oral Presentation
Session: Applied
Track: Track F - Applied and Industrial Physics


<p>An understanding of the types of defects produced during the doping/implantation of diamond remains essential for the optimization of high-temperature, high-power electronic applications. Thus this study focuses on investigating the nature of the radiation damage produced during the multi-implantation of carbon ions in synthetic type Ib and natural diamonds, according to the CIRA (Cold-Implantation-Rapid-Annealing) routine. The implanted and annealed diamond samples were characterized using bright field transmission electron microscopy (BFTEM) in conjunction with selected area diffraction (SAD). For low fluence implantations, the damaged diamond retains its crystallinity after annealing at 1600K, while implanting using doses above the amorphisation/graphitization threshold, followed by rapid thermal annealing (RTA) at 1600K, results in a multi-layer of graphite/amorphous carbon close to the surface.

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Room: Acro3

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