7-11 July 2014
Africa/Johannesburg timezone
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Investigation of the migration behaviour of Strontium ion implanted in Silicon Carbide

Presented by Ms. Thabsile THABETHE on 9 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Session: Poster2
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.272


The migration behaviour of strontium through single and poly crystalline SiC (6H-SiC and CVD-SiC) wafers was investigated using Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and Raman spectroscopy. A fluence of 1.153×10^16 cm^-2 of Sr ion was implanted into 6H-SiC wafer with an energy of 360 keV at room temperatures (RT = 23 °C). The change in average depth of the implantation Sr ion profile was determined by isochronal and isothermal annealing studies at temperatures up to 1400 °C. The strong influence of radiation damage on diffusion after room temperature implantations was observed in all cases during the initial annealing stages at 1000 °C. Recrystallization of the highly disordered crystal at this annealing temperature is taking place. Further diffusion took place as the annealing temperature was increased from 1000 to 1400 ºC. Annealing of the radiation damage and structural reconstruction was observed to be taking place at these annealing temperatures.






Prof J B Malherbe, Johan.Malherbe@up.ac.za, University of Pretoria




Room: D Ring ground level

Primary authors