7-11 July 2014
Africa/Johannesburg timezone
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Laser spectroscopy studies of the recrystallization of an amorphous layer in GaAs produced by argon ion implantation at ~77 K

Presented by Mr. Kudakwashe JAKATA on 8 Jul 2014 from 11:50 to 12:10
Type: Oral Presentation
Session: DPCMM1
Track: Track A - Division for Physics of Condensed Matter and Materials

Abstract

Recrystallization of an amorphous layer of GaAs on a crystalline GaAs substrate formed by argon-ion bombardment at 100 keV has been investigated using surface Brillouin scattering and Raman spectroscopy. Two samples were implanted at doses of 1×10<sup>15</sup> ions/cm<sup>2</sup> and at 2×10<sup>14</sup> ions/cm<sup>2</sup>, both at a temperature of ~77 K. Surface Brillouin scattering (SBS) and Raman scattering have been used to study the isochronal annealing of these two samples. It has been found that the stiffening of the elastic constants as measured with SBS begins at around 120 <sup>o</sup>C and reaches a maximum at 260 <sup>o</sup>C for both samples. Using the Raman technique, it has been observed that the recrystallization of the higher dose implanted sample occurs at around 260 <sup>o</sup>C compared to 240 <sup>o</sup>C for the 2×10<sup>14</sup> ions/cm<sup>2</sup> implant. These measurements are compared to previous results obtained on implantations at temperatures of ~ 65<sup>o</sup>C.

Award

Yes

Level

PhD

Supervisor

Darrell Comins Darrell.Comins@wits.ac.za University of the Witwatersrand

Paper

No

Place

Room: D Les 201


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