9-13 July 2012
Erbium point defects and complexes in GaN: A G0W0 and hybrid functional study
Presented by Mr. Cecil OUMA on 11 Jul 2012 from 11:15 to 11:35
Type: Oral Presentation
Track: Track A - Division for Condensed Matter Physics and Materials
We have investigated erbium (Er3+) point defects and defect complexes in GaN a wide band gap semiconductor using; generalized gradient approximation (PBE-GGA), G0W0 quasi-particle approximation and hybrid functional (HSE06). We have paid particular attention to the structure, energetics, and electronic properties of the defects. We found the most stable site for Er3+ to be when the Er3+ is located at a Ga substitutional site but none of the defects possess deep energy levels..
Dr Walter E Meyer email@example.com