9-13 July 2012
Africa/Johannesburg timezone
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Erbium point defects and complexes in GaN: A G0W0 and hybrid functional study

Presented by Mr. Cecil OUMA on 11 Jul 2012 from 11:15 to 11:35
Type: Oral Presentation
Session: DCMPM2
Track: Track A - Division for Condensed Matter Physics and Materials

Abstract

We have investigated erbium (Er3+) point defects and defect complexes in GaN a wide band gap semiconductor using; generalized gradient approximation (PBE-GGA), G0W0 quasi-particle approximation and hybrid functional (HSE06). We have paid particular attention to the structure, energetics, and electronic properties of the defects. We found the most stable site for Er3+ to be when the Er3+ is located at a Ga substitutional site but none of the defects possess deep energy levels..

Award

Yes

Level

PhD

Supervisor

Dr Walter E Meyer wmeyer@up.ac.za

Paper

Yes

Primary authors

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