9-13 July 2012
Effect of temperature on spectral response measurements of crystalline silicon photovoltaic cells
Presented by Mr. Maibi MALAPE on 12 Jul 2012 from 17:30 to 19:30
Type: Poster Presentation
Session: Poster Session
Track: Track F - Applied Physics
The SR of a PV is a measure of the effectiveness of the conversion of the light power into electrical current. It is essential for understanding current generation, recombination, and diffusion mechanism in photovoltaic devices. This work presents systematic measurements of the SR of two crystalline silicon PV devices (mono-Si and poly-Si) measured in a narrow cell temperature ranges from 25 ˚C to 65 ˚C in the dark and under bias lights conditions. In the dark the SR intensity of the mono-Si device decreased with increasing temperature at wavelengths range below 1125 nm whereas the SR intensity of the poly-Si device increased with increasing temperature at wavelengths range λ ˃ 400 nm. Under bias lights conditions the SR intensities for both devices increased slightly at long wavelengths (λ ˃ 900 nm) with increasing temperature. This paper is aimed at explaining and discussing the dependence of mono-Si and poly-Si SR’s on cell temperatures in the dark and under bias light illumination.
Prof. Edson Meyer email@example.com Fort Hare