4-8 July 2016
Kramer Law building
Africa/Johannesburg timezone
The Proceedings of SAIP2016 published on 24 December 2017
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Effect of thermal annealing on the electrical characteristics of Au/Ni Schottky contacts on high doped n-type 4H-SiC

Presented by Dr. Ezekiel OMOTOSO on 8 Jul 2016 from 11:50 to 12:10
Type: Oral Presentation
Track: Track A - Division for Physics of Condensed Matter and Materials

Abstract

Au/Ni contacts have been resistively fabricated on highly doped n-type 4H-SiC. The effect of annealing temperature on the electrical characteristics of the Schottky barrier diodes (SBDs) has been successfully investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques measured at room temperature (~300 K). Prior to the annealing of the contacts, the I-V measurements results confirmed the good rectification of the SBDs with ideality factor, Schottky barrier height and series resistance of 1.06, 1.33 eV and 7 Ω, respectively. From the I-V and C-V measurements, a decrease in the quality of the contacts with increasing annealing temperature was observed from the values of electronic parameters such as Schottky barrier height, ideality factor, series resistance and saturation current and net donor concentration obtained. The SBDs maintained their rectification quality up to the annealing temperature of 500 °C before the contacts start deteriorate with increase in annealing temperature.

Award

No

Level

N/A

Supervisor

Prof. W. E. Meyer (wmeyer@up.ac.za University of Pretoria

Paper

Yes

Permission

Yes

Place

Location: Kramer Law building
Address: UCT Middle Campus Cape Town
Room: 4B


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