SAIP2015

Electrical characterization of undoped and niobium-doped n-silicon diodes

30 Jun 2015, 16:10

1h 50m

Board: A.213

Poster Presentation Track A - Division for Physics of Condensed Matter and Materials Poster1

Speaker

Mr Mohapi Thebe (Student)

Main supervisor (name and email)<br>and his / her institution

Dr.S.J Moloi; moloisj@unisa.ac.za

Please indicate whether<br>this abstract may be<br>published online<br>(Yes / No)

yes

Level for award<br>&nbsp;(Hons, MSc, <br> &nbsp; PhD, N/A)?

MSc

Apply to be<br> considered for a student <br> &nbsp; award (Yes / No)?

Yes

Abstract content <br> &nbsp; (Max 300 words)<br><a href="http://events.saip.org.za/getFile.py/access?resId=0&materialId=0&confId=34" target="_blank">Formatting &<br>Special chars</a>

The research undertaken was to characterize the Schottky diodes fabricated on undoped and metal-doped n-silicon substrate using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The metal used is niobium. The obtained results were used to investigate the effects of niobium on silicon material. The I-V data were used to extract the saturation current, the ideality factor and Schottky barrier height, while the C-V data on the other hand, was used to determine the doping profiles for all fabricated diodes. In overall, the results show that the silicon has become relaxation-like.

Would you like to <br> submit a short paper <br> for the Conference <br> Proceedings (Yes / No)?

yes

Presentation Materials

Poster

Mohapi_Thebe_213_Poster.pdf