7-11 July 2014
Africa/Johannesburg timezone
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Palladium silicide formation on n-Si (111) By Thermal Annealing

Presented by Ms. Helga DANGA on 9 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Session: Poster2
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.212

Abstract

Palladium Schottky contacts were fabricated on epitaxially grown n-type Silicon (111) by resistive deposition. Current-voltage (I-V), capacitance- voltage (C-V) measurement techniques were used to characterise the as deposited and annealed Pd/n-Si Schottky contacts. These contacts were annealed at temperatures ranging from 200°C to 700°C, in steps of 100°C for ten minutes at each temperature. The ideality factor increased from 1.2 for as deposited to 1.6 after annealing at 700°C while the Schottky barrier height (SBH) decreased from 0.69 to 0.64 eV as the annealing temperature increased. In this study, silicides seem to start forming at 200°C where the ideality factor is lowers to a value of 1.1 and the SBH is at its highest value of 0.70eV. The Rutherford backscattering Spectroscopy (RBS) technique was used to verify temperatures at which Pd2Si was formed. The results obtained suggest that the Pd2Si silicide phase begins to form at 200°C and at 400°C it is completely formed.

Award

Yes

Level

MSc

Supervisor

Mmantsae Diale mmantsae.diale@up.ac.za University of Pretoria

Paper

No

Place

Room: D Ring ground level


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