7-11 July 2014
Africa/Johannesburg timezone
Home > Timetable > Session details > Contribution details
PDF | XML | iCal

Growth of FeSi nanowires by Chemical Vapour Deposition for Gas Sensing Applications

Presented by Dr. Sibongiseni THABETHE on 9 Jul 2014 from 17:10 to 19:00
Type: Poster Presentation
Session: Poster2
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.190

Abstract

FeSi belongs to a class of narrow band gap semiconductors. It has been studied for more than 30 years because of its unusual properties such as its metal to insulator transition (MIT) at temperatures near 300 K [1,2]. We report on the synthesis of FeSi nanowires using chemical vapor deposition for gas sensing applications. Anhydrous FeCl3 powder was used as the precursor. N2 gas was used to carry the precursor vapors to the silicon substrates which were placed in a horizontal quartz tube furnace at a temperature of 1100oC. XRD and TEM results confirm that the nanowires are FeSi with a cubic crystal structure. References [1]J.R Szczech, S. Jin. Journal of Material Chemistry. 2010, 20, 1375-1382. [2]S. Jang, Y. Lee, S. Kim, J. Seo, D. Kim, Material Letters, 2011, 65, 2979-2981.

Award

No

Level

MSc

Supervisor

Bonex Mwakikunga BMwakikunga@csir.co.za Council for Scientic and Industrial Research

Paper

No

Place

Room: D Ring ground level


Primary authors

More

Co-authors

More