from 28 June 2015 to 3 July 2015 (Africa/Johannesburg)
SAIP2015 Proceeding published on 17 July 2016
Investigation of MOVPE-InSb Quantum Dots grown using TMIn and TDMASb
Presented by Mr. Chinedu Christian AHIA on 30 Jun 2015 from 16:10 to 18:00
Type: Poster Presentation
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.179
The size distribution and growth conditions of self-assembled InSb quantum dots (QDs) on a GaSb substrate (2° off (100)) using different V/III ratios were investigated. The QDs were grown using atmospheric pressure MOVPE and a growth temperature of 425°C. Scanning electron microscopy (SEM) of the uncapped QDs revealed that their dimensions ranged from 10 nm to 60 nm in diameter. A scanning probe microscopy (SPM) analysis of the uncapped QDs showed a bimodal size distribution of QDs on the misoriented surface of the substrate and confirmed a reduction in dot density and diameter as the V/III ratio increased from 1 to 3. Also from SPM, the heights of the QDs were determined to range from 5 nm to 19 nm. The experimental results confirm that the V/III ratio affects the size distribution and density of the QDs, which can be attributed to a change in the surface migration length of the indium species during deposition.
Professor Reinhardt Botha, Reinhardt.Botha@nmmu.ac.za, Nelson Mandela Metropolitan University.