8-12 July 2013
Africa/Johannesburg timezone
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On the metastability of the C center in Silicon: An ab initio study

Presented by Mr. Cecil OUMA on 9 Jul 2013 from 17:40 to 18:40
Type: Poster Presentation
Session: Poster1
Track: Track A - Division for Condensed Matter Physics and Materials


The electronic properties of the C center defect in silicon (Si) have been investigated by ab initio density functional theory (DFT). The C center is a boron- vacancy (B-V) pair in Si. We present the properties of four (4) configurations of the C center. We report defect levels for isolated BSi and VSi at Ev+0.07 eV and Ev+0.21 eV respectively for the 0/-1 thermodynamic transition, and Ev+0.08 eV and Ev+0.06 eV for two configurations of the C center compared to experimentally reported levels at Ev+0.5 eV and Ev+0.36 eV. The other two configurations of the C center did not have levels for the 0/-1 transition. We report configurationally charge-induced metastability of the C center in the four different configurations occurring in the negative charge states of the defect.






Prof Wlater E Meyer wmeyer@up.ac.za



Primary authors