from 28 June 2015 to 3 July 2015 (Africa/Johannesburg)
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SAIP2015 Proceeding published on 17 July 2016
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Effect of Background gas and substrate temperature on ZnO:Zn thin films

Presented by Mr. Emad HASABELDAIM on 30 Jun 2015 from 16:10 to 18:00
Type: Poster Presentation
Session: Poster1
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.128


The dependence of the structural and optical properties of ZnO:Zn thin films deposited by Pulsed laser deposition on the preparation conditions has been investigated. All the films showed highly c-axis orientation, and their crystallinities were improved with an increase in the substrate temperature. The stress in the thin films was varied (-12.7 to -7.30GPa) according to the chamber atmosphere gas.The minimum value was obtained in the case of the Oxygenbackground gas. The optical bandgap varied from 3.12 to 3.19 to 3.20eVwith changing the deposition chamber gas from Argon – Vacuum to Oxygen, respectively, it also varied from 3.14 to 3.20eV in the case of the variation in the substrate temperatures from 200 to 400 °C. The thin films obtained in the Oxygen atmosphere showed strong photoluminescence emission around the orange region(627nm), while a weak emission around 450 and 753nm was observed for the Argon atmospherefilm and ultra violet emission (UV) was obtained for all deposition conditions. These ZnO:Zn thin films may be used in the design, simulation and fabrication of optoelectronics devices such as white light emitting diode and sensor/actuator in hard disk drives.






HC Swart (, University of the Free State





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