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SAIP2015 Proceeding published on 17 July 2016
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Effect of temperature annealing on 4H-SiC Schottky barrier diodes after alpha-particle irradiation at high fluences

Presented by Mr. Ezekiel OMOTOSO on 30 Jun 2015 from 16:10 to 18:00
Type: Poster Presentation
Session: Poster1
Track: Track A - Division for Physics of Condensed Matter and Materials
Board #: A.122

Abstract

Aim of the work is to study the effect of room temperature annealing on the deep level emanated after bombarding 4H-SiC Schottky diodes with 5.4 MeV alpha-particles at fluence of 9.2 × 10^(11) particles-cm^(–2). The investigation was carried out by means of current-voltage and capacitance-voltage characteristics in 300 K temperature, and deep level transient spectroscopy in temperature range of 25 – 350 K. The dependence of ideality factor, Schottky barrier height and free carrier concentration were investigated as a function of radiation fluence was determined. Ideality factor increases with radiation fluence. But, Schottky barrier height and free carrier concentration decrease with radiation fluence. The activation energy and apparent capture cross section of the new defect introduced were determined to be 0.37 eV and 5.5 × 10^(–16) cm^(2), respectively. This new defect annealed out at room temperature after one week.

Award

No

Level

PhD

Supervisor

Prof W. E. Meyer

Paper

Yes

Permission

Yes

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