from 28 June 2015 to 3 July 2015 (Africa/Johannesburg)
SAIP2015 Proceeding published on 17 July 2016
Details for Prof. AURET, Danie
|Affiliation||University of Pretoria|
Author in the following contribution(s)
Investigation of the annealing behaviour of the donor-vacancy complex in alpha-particle irradiated Ge.
A comparison of solid state reaction, electrical performance and failure mechanism of ruthenium Schottky contacts on 6H-SiC and 4H-SiC after air annealing.
Effect of temperature annealing on 4H-SiC Schottky barrier diodes after alpha-particle irradiation at high fluences
Electrical Characterization of MeV Alpha-particle Irradiated Ni/4H-SiC Diodes and their Recovery by Annealing Treatment